| 摘要 |
PURPOSE: To extend the life of a light-emitting element utilizing a semiconductor film and especially improve characteristics by providing II-VI compound semiconductor layer consisting of specific elements and Ge layer on a substrate. CONSTITUTION: At least one layer of II-VI compound semiconductor consisting of at least two types of elements out of Zn, Cd, Mg, Be, S, and Se is provided on n-type GaAs substrate 1, Zn-doped p-type Ge layer (a positive concentration of 5×10<19> cm<-3> ) and nitrogen-doped p- -type Zn0.07 Se0.93 (a positive concentration of 5×10<17> cm<-3> ) indicating p-type conductivity are alternately laminated on nitrogen-doped p-type ZnSe layer 8 at the uppermost part to grow a superlattice layer. Then, the Zn-doped p- -type Ge layer (a positive concentration of 5×10<19> cm<-3> ) is grown after the superlattice layer to from Ge gap layer 15 and hence to grow a light-emitting element, thus extending the life of the light-emitting element utilizing a semiconductor film and at the same time improving characteristics.
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