发明名称 |
METHOD FOR MANUFACTURING OPTICALLY TRIGGERED LATERAL THYRISTOR |
摘要 |
A method for manufacturing an optically triggered lateral thyristor is to form an anode region by providing a first opening in an insulating layer formed on a semiconductor substrate, a diffusion layer by providing a second opening in the insulating layer to be spaced from the anode region, a base-forming region by providing a third opening in the insulating layer externally adjacent to the second opening, and a base region and simultaneously a cathode region by means of double diffusion through the third opening, the base region having a lateral width determined by a diffusion difference between the base and cathode regions for effective minimization of the width.
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申请公布号 |
CA2036573(C) |
申请公布日期 |
1996.03.12 |
申请号 |
CA19912036573 |
申请日期 |
1991.02.19 |
申请人 |
MATSUSHITA ELECTRIC WORKS, LTD. |
发明人 |
AKIYAMA, SIGEO;KATO, FUMIO;HOSOTANI, KIYOSHI;MIYAMOTO, MASATO |
分类号 |
H01L31/111;(IPC1-7):H01L31/111 |
主分类号 |
H01L31/111 |
代理机构 |
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主权项 |
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地址 |
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