发明名称 METHOD FOR MANUFACTURING OPTICALLY TRIGGERED LATERAL THYRISTOR
摘要 A method for manufacturing an optically triggered lateral thyristor is to form an anode region by providing a first opening in an insulating layer formed on a semiconductor substrate, a diffusion layer by providing a second opening in the insulating layer to be spaced from the anode region, a base-forming region by providing a third opening in the insulating layer externally adjacent to the second opening, and a base region and simultaneously a cathode region by means of double diffusion through the third opening, the base region having a lateral width determined by a diffusion difference between the base and cathode regions for effective minimization of the width.
申请公布号 CA2036573(C) 申请公布日期 1996.03.12
申请号 CA19912036573 申请日期 1991.02.19
申请人 MATSUSHITA ELECTRIC WORKS, LTD. 发明人 AKIYAMA, SIGEO;KATO, FUMIO;HOSOTANI, KIYOSHI;MIYAMOTO, MASATO
分类号 H01L31/111;(IPC1-7):H01L31/111 主分类号 H01L31/111
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