| 摘要 |
PURPOSE: To prevent generation of large warp after resin sealing, by constituting a lead frame and a resin package containing silicon filler, from materials having specific coefficients of linear expansion. CONSTITUTION: In the title semiconductor device, a semiconductor element 1 mounted on a die pad 2 is connected with leads 4 which stretch outside, and sealed in a resin package 6. The surface of the die pad 2 which surface is opposite to the mounting surface of the semiconductor element l is exposed from a resin package 6 to the outside. A lead frame consists of the die pad 2 and the leads 4, and made of iron-nickel alloy whose coefficient of linear expansion and plate thickness are 9.0×10<-6> --11.0×10<-6> and 0.075-0.127mm, respectively. The resin package 6 is made of epoxy based resin containing silicone filler whose amount is 78-81wt.%. The expansion coefficient of linear expansion of the resin is 11.0×10<-6> -13.0×10<-6> . |
