| 摘要 |
PURPOSE: To fabricate a semiconductor having a metallic wiring strong against migration. CONSTITUTION: The semiconductor device comprises an insulation film 104a deposited on a semiconductor substrate 101 through a diffusion layer 103, a via hole 105 made through the insulation film 104a, a metal silicide 107 deposited on the bottom of the via hole 105, a first conductive film 106a including one or a plurality of metal films deposited on the insulation film 104a and the via hole 105, a second conductive film 109a deposited in the via hole 105, a third conductive film 109b deposited on the first and second conductive films 106a 109a, and a fourth conductive film 106b deposited on the third conductive film 109b. |
