| 摘要 |
<p>PURPOSE: To enhance the reliability of TFT by lowering the OFF current and to fabricate a TFT without complicating the process. CONSTITUTION: A gate insulating film formed between a semiconductor layer and a gate electrode 8 comprises a first part 6a and a second part 6b of different thickness on the semiconductor layer part between a source region 5a and a drain region 5b. Since a region insusceptible to the application of gate voltage is formed partially in a channel region sandwiched by the source region 5a and the drain region 5b, a voltage applied between the source and drain is not concentrated but distributed. Consequently, the field is relaxed in that region and steep increase of the field being applied between the source and drain is relaxed.</p> |
