发明名称 PREPARATION OF MICROCHIP ELECTRON SOURCE
摘要 <p>PROBLEM TO BE SOLVED: To obtain a method to effectively manufacture a micro tip electron source having a large area. SOLUTION: This is a method to manufacture a structure having an insulating substrate 10, a cathode conductive body 12 provided above it, an electric insulating layer 14 provided above it, an electric conductive gate layer 16 provided above it, holes 18, 19 formed passing through the gate layer and the electric insulating layer, and a micro tip 62 made of an electron discharging metallic material is formed on it. An electric insulating protection layer 50 is formed on the gate layer 16, and a chemical accumulating materials of an electron discharging metallic material are developed from an inner bottom of each hole. Then, the protection layer 50 is removed, and the metallic accumulating materials are electrically etched to form the micro tip 62. This can be applied to manufacturing a flat screen.</p>
申请公布号 JPH0869749(A) 申请公布日期 1996.03.12
申请号 JP19950208251 申请日期 1995.08.15
申请人 COMMISS ENERG ATOM 发明人 JIIRU DERAPIEERU;ROBEERU MEIYAA
分类号 H01J1/30;H01J1/304;H01J9/02;(IPC1-7):H01J9/02 主分类号 H01J1/30
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