| 摘要 |
In an exposure method of illuminating a pattern formed on a mask with illumination light from an illumination optical system, and projecting/exposing an image of the pattern on a photosensitive substrate through a projection optical system, the pattern includes a transmission portion having a transmittance of about 1 with respect to the illumination light and a phase shift transmission portion which provides a phase difference of about (2n+1) pi (n is an integer) with respect to the light transmitted through the transmission portion, and has a pattern width not more than a resolving limit of the projection optical system. The illumination light passing through a predetermined plane which is substantially coincident with a Fourier transform plane of the mask in the illumination optical system or a conjugate plane thereto, is limited to at least one local region having the center at a position shifted from an optical axis of the illumination optical system, thereby inclining the illumination light radiated on the mask at an angle corresponding to fineness of the pattern in a predetermined direction.
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