Semiconductor optical memory device for optical storage of information with increased recording density

摘要

A semiconductor optical memory device includes a semiconductor layer formed with a plurality of elemental recording areas each having a size generally equal to a wavelength of the optical beam. A plurality of quantized regions are formed in each elemental recording area of the semiconductor layer. Each of the quantized regions has a quantized energy level and absorbing an optical radiation of which wavelength is pertinent to the quantized energy level of that quantized region by forming first type carriers having a first polarity and second type carriers having a second, opposing polarity. Each of the quantized regions includes a semiconductor material confined in at least two mutually perpendicular directions to form the quantized energy level and has the optical absorption wavelength that is different from that of other quantized regions included in each elemental recording area.