| 摘要 |
<p>PURPOSE: To make thin the field oxide for preventing dielectric breakdown between a substrate and a wiring and an electrode in a semiconductor device having monolithic photocoupler. CONSTITUTION: A polysilicon layer 3 is formed on a silicon substrate 1 and insular regions 6a, 6b of single crystal silicon are formed on the layer 3, while being surrounded by dielectric isolation films 5a, 5b. A LED 14 is formed in the insular single crystal region 6a and a phototransistor 18 is formed in the insular single crystal region 6b. The LED 14 and the phototransistor 18 are coupled optically through a titanium oxide layer 22. Aluminum wirings 23, 24, 27, 28 and an Au-Zn electrode 13 for externally connecting the LED 14 and the phototransistor 18 are formed only in the insular regions 6a, 6b.</p> |
