发明名称 Semiconductor device and method of manufacturing such semiconductor device
摘要 The close-packed plane of a single crystal forming an electrode line such as electrodes or lines of a semiconductor device whose active regions are reduced in size, i.e., highly integrated, is arranged parallel to the longitudinal direction of the line; or in the case of a polycrystalline electrode line, the angle formed between the normal line direction of the close-packed plane of its crystal grains and that of the electrode line is arranged to be 80 DEG or less.
申请公布号 US5498909(A) 申请公布日期 1996.03.12
申请号 US19920937398 申请日期 1992.08.31
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 HASUNUMA, MASAHIKO;KANEKO, HISASHI;SAWABE, ATSUHITO;KAWANOUE, TAKASHI;KOHANAWA, YOSHIKO;KOMATSU, SHUICHI
分类号 C30B25/14;H01L21/28;H01L21/285;H01L21/3205;H01L21/822;H01L23/52;H01L23/532;H01L27/04;H01L29/41;(IPC1-7):H01L23/48;H01L29/40;H01L23/28 主分类号 C30B25/14
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