发明名称 |
Semiconductor device and method of manufacturing such semiconductor device |
摘要 |
The close-packed plane of a single crystal forming an electrode line such as electrodes or lines of a semiconductor device whose active regions are reduced in size, i.e., highly integrated, is arranged parallel to the longitudinal direction of the line; or in the case of a polycrystalline electrode line, the angle formed between the normal line direction of the close-packed plane of its crystal grains and that of the electrode line is arranged to be 80 DEG or less.
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申请公布号 |
US5498909(A) |
申请公布日期 |
1996.03.12 |
申请号 |
US19920937398 |
申请日期 |
1992.08.31 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
HASUNUMA, MASAHIKO;KANEKO, HISASHI;SAWABE, ATSUHITO;KAWANOUE, TAKASHI;KOHANAWA, YOSHIKO;KOMATSU, SHUICHI |
分类号 |
C30B25/14;H01L21/28;H01L21/285;H01L21/3205;H01L21/822;H01L23/52;H01L23/532;H01L27/04;H01L29/41;(IPC1-7):H01L23/48;H01L29/40;H01L23/28 |
主分类号 |
C30B25/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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