| 摘要 |
PURPOSE: To prevent a protrusion from being formed on an underlying electrode through deposition of a material having high permittivity without sacrifice of the permittivity. CONSTITUTION: In a semiconductor device where a dielectric film 16 having high permittivity is formed on an electrode 14 formed on an underlying substrate, i.e., a silicon substrate 10 deposited with silicon oxide 12, the electrode 14 is composed of ruthenium oxide added with a specified quantity of at least one kind of iridium or osmium. |
