发明名称 |
Polycrystalline semiconductive film, semiconductor device using the same and method of manufacturing the same |
摘要 |
A semiconductive film is formed on a substrate having a surface with indentations defining a plurality of plane regions and elevated step difference portions between adjacent plane regions. The semiconductive film is irradiated with energy beams to be polycrystallized, whereby the positions of the crystal grain boundaries in the polycrystalline semiconductive film are controlled.
|
申请公布号 |
US5498904(A) |
申请公布日期 |
1996.03.12 |
申请号 |
US19940312610 |
申请日期 |
1994.09.27 |
申请人 |
SANYO ELECTRIC CO., LTD. |
发明人 |
HARATA, YASUKI;KAMEDA, MASAAKI;SANO, KEIICHI;AYA, YOICHIRO |
分类号 |
H01L21/336;H01L29/786;H01L31/0368;H01L31/068;H01L31/18;H01L31/20;(IPC1-7):H01L29/06;H01L21/469 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|