| 摘要 |
<p>PURPOSE: To obtain a semiconductor device equipped with a triac for eliminating the need of any special drive circuit in which the LED drive current of gate drive current is reduced by suppressing the increase of optical gate sensitivity or gate sensitivity significantly. CONSTITUTION: In a semiconductor device where a Darlington connection structure is employed for a drive stage triac 23 and an output stage triac 1, the lifetime of minority carrier is set at a predetermined value in the base region of the output stage triac 1 and the lifetime of minority carrier in the base region of the drive stage triac 23 is set higher than the predetermined value. The lifetime of minority carrier in the base region of the triac 23 is set between 7 to 12μs and the lifetime of minority carrier in the base region of the triac 1 is selected from values in the range of 4 to 10μs.</p> |
