| 摘要 |
<p>PURPOSE: To decrease the reduction in the numerical aperture and the production yield by forming the planer structures in odd lines and even lines of pixels in a mirror inversion structure. CONSTITUTION: A thin film transistor(TFT) having a gate insulating film/ semiconductor film is formed as a switching element just under or on the a electrode 3. The planar structure in an even line of pixels and the planar structure in an odd line are formed in a mirror inversion structure to each other. Since the structure of pixels in the odd lines and the structure of pixels in the even lines are symmetric for a line, the channel length L of the parasitic TFT (the distance between the source electrode 2-1 in one pixel and the drain electrode 1-2 in the adjacent pixel) becomes longer than a conventional structure. As a result, influences of the display signal voltage applied from the drain electrode 1-2 in the adjacent pixel is reduced. Thereby, a conventional drain electrode formed to prevent mixing of display signal voltage from a drain electrode 1-2 in the adjacent pixel is not necessary. Thus, the reduction of numerical aperture and production yield can be prevented.</p> |
