| 摘要 |
PURPOSE: To obtain a resonance tunnel bipolar transistor in which a better negative resistance is realized while enhancingβby eliminating a quantum well structure causing storage of carriers from the carrier travel path between emitter and collector thereby reducing the recoupled current on the emitter-base interface and in the quantum well. CONSTITUTION: An n-type collector layer 2 and a p-type base layer 3 are formed sequentially on a semiconductor substrate 10. A quantum well structure 4 for forming the quantum level of hole and a p-type contact layer 5 are then formed sequentially at a part of the p-type base layer 3. An n-type emitter layer 6 is formed at other parts on the p-type base layer 5. The n-type collector layer 2, the p-type contact layer 5, and the n-type emitter layer 6 are provided, respectively, with a collector electrode 8C, a base electrode 9, and an emitter electrode 8E making ohmic contact therewith. The inventive bipolar transistor is characterized that the quantum well structure 4 is provided selectively only under the base electrode 9 on the base layer 3.
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