| 摘要 |
PURPOSE: To easily produce a nanometer order quantization structure at low temperature by a method wherein different kind of amorphous semiconductor hetero-structural film is provided on a semiconductor single crystal structure so as to be irradiated with X-rays for crystallization. CONSTITUTION: A hetero-structural film 5 comprising an amorphous Alx Ga1-x As 2/amorphous GaAs 3/amorphous Aly Ga1-y As 4 is deposited on a GaAs single crystal substrate 1. Next, this amorphous hetero structural film 5 is irradiated with nanometer order fine beams formed of convergent mirror, etc., or X-ray interference fringe beams 6 in nanometer order fringe intervals by crystallization to be selectively crystallized. In such a constitution, the amorphous state of non-crystallized region 5 is in high resistance state while the crystallized region 10 of crystallized Alx Ga1-x As 7/crystallized GaAs 8/crystallized Aly Ga1-y As 9 is of nanometer size so that the crystallized region 10 may fill the role of a quantum dot structure when the irradiated X-rays are fine beams while filling the role of a quantum wire structure when the irradiated X-rays are the interference fringe beams. |
