| 摘要 |
PURPOSE: To restrain heating of a wafer and improve production yield by repeating processes, until a metal layer of a desired thickness is formed by generating a void inside a metal thin film which is deposited on a board and thereafter heating a surface of a thin film. CONSTITUTION: A deposit/flattening process has three steps an operation of a phase I, a phase II and a phase III. In the phase I, a thin layer of aluminum Al is deposited on the surface of a wafer 28 by sputtering (10 to 15Å, for example). During the phase II, low energy Ar<+> ions (100 eV, for example) bombard a surface of the wafer 28 and generates a void or a hole in an Al thin layer which has just been deposited. During the phase III, electrons are implanted in a surface of the wafer 28, excites a surface of the wafer 28 and enables reflow of a metal layer. A sequence of the three steps is repeated many times, until a predetermined whole metal layer thickness is attained.
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