A phase shift layer is formed on a transparent glass on which a Cr pattern is formed and a phase shift layer pattern self-aligned by the Cr pattern is formed so that high resolution is obtained by minimized the overlapping error and the reliability of the semiconductor device is improved.
申请公布号
US5498497(A)
申请公布日期
1996.03.12
申请号
US19940297666
申请日期
1994.08.29
申请人
HYUNDAI ELECTRONICS INDUSTRIES, CO., LTD.
发明人
KIM, YOUNG S.;HAM, YOUNG M.;HUH, IK B.;KIM, HUNG E.