发明名称 Method for manufacturing a phase shift mask
摘要 A phase shift layer is formed on a transparent glass on which a Cr pattern is formed and a phase shift layer pattern self-aligned by the Cr pattern is formed so that high resolution is obtained by minimized the overlapping error and the reliability of the semiconductor device is improved.
申请公布号 US5498497(A) 申请公布日期 1996.03.12
申请号 US19940297666 申请日期 1994.08.29
申请人 HYUNDAI ELECTRONICS INDUSTRIES, CO., LTD. 发明人 KIM, YOUNG S.;HAM, YOUNG M.;HUH, IK B.;KIM, HUNG E.
分类号 G03F1/08;G03F1/00;H01L21/027;(IPC1-7):G03F9/00 主分类号 G03F1/08
代理机构 代理人
主权项
地址