| 摘要 |
PURPOSE: To realize high integration and high-speed operation at the same time by isolating elements by using a striped trench formed on a semiconductor substrate and forming the upper surface part of the trench between its side-wall upper part and adjoining trench into a channel. CONSTITUTION: The device is provided with a trench 23 that is formed striped with a specified interval in distance on a semiconductor substrate 21 and a plurality of gate electrodes 29 that are formed in line with an insulation material film 27 interposed on the substrate 21 in a manner to cross the trench 23. The upper surface part 23b between a side-wall upper part 23a of the trench 23, that is adjacent just beneath the electrode 29, and the adjoining trench 23 is formed into a diffusion layer 31 for source and drain. In addition, The upper surface part 23b between the side-wall upper part 23a of the trench 23 just beneath the electrode 29 and the adjoining trench 23 is formed into a channel 33. Thus, the distance among elements can be reduced and the channel width be also made larger to increase the cell current quantity, resulting in high integration and high-speed operation. |
