| 摘要 |
PURPOSE: To provide a semiconductor yaw rate sensor having an improved temperature characteristic. CONSTITUTION: When a yaw rate is added to movable electrodes 14, 151 and 152 vibrating in the horizontal direction, displacement takes place vertically in the electrodes 14, 151 and 152 relative to a semiconductor substrate 11, due to Coriolis force. Then, the displacement is detected by drain current between source electrodes 171 and 172, and drain electrodes 181 and 182. Voltage is applied to lower electrodes 601 to 603, so as to keep the drain current at a preset value, and the electrodes 14, 151 and 152 are feedback-controlled to be kept at constant positions. A yaw rate is detected on the basis of a feedback amount at the control process. |
