| 摘要 |
PURPOSE: To prevent oxidation of under layer metal during sputtering or due to a transparent oxide layer by selecting a metal having the particular electron affinity to the underlayer metal as the metal forming the transparent oxide layer and by forming the transparent electrode using a target where the amount of metal is a specific number of times greater than the stoichiometry composition of the transparent oxide layer. CONSTITUTION: A layer 102 of the metal having higher reflectivity is formed on the surface of a substrate 101. A transparent oxide layer 103 whose surface has fine projected and recessed areas is formed on the metal layer 102. Inactive gas such as H2 , O2 and Ar, etc., is introduced into a deposition chamber, a target 207 (amount of Zn is 1.06 to 1.2 times more than that of the stoichiometry composition) is fixed to the surface opposed to the anode 206 and a high voltage is applied. Moreover, a layer 103 is composed of a metal oxide layer 104 formed by the target (Zn+ZnO) including excessive metal and a metal oxide layer 105 (electron affinity is smaller than 0.46eV) formed by ZnO target. With the effect of plasma to which a high voltage is applied, the deposited Zn absorbs oxygen from the metal layer 102 to prevent oxidation. |
