发明名称 SENSE AMPLIFIER OF SEMICONDUCTOR MEMORY
摘要 PURPOSE: To minimize an outbreak of noises at the time of a high potential source voltage and prevent a decrease of an amplification speed at the time of a low potential source voltage, by detecting a source voltage and maintaining constant a current signal supplied to a cross-coupled latch via a pullup driving part and a pull-down driving part. CONSTITUTION: A source voltage VDD-VSS is detected by a source voltage detection circuit 11. In accordance with a detection resultϕPWR, a pull-down driving part 13 is controlled by a pullup driving part to which a second sense amplifier control signalϕSEN and a first sense amplifier control signalϕSEP are supplied respectively. A current signal supplied to a cross-coupled latch connected to a bit line BL to which true/false data are supplied and a dummy bit line/BL to which constant complementary data are supplied is maintained. Accordingly, a noise component due to a higher source voltage than a critical voltage is minimized and the excessive consumption of power is prevented. At the same time, the decrease of an amplification speed is prevented even to a lower source voltage than the critical voltage.
申请公布号 JPH0863978(A) 申请公布日期 1996.03.08
申请号 JP19950026643 申请日期 1995.02.15
申请人 GENDAI DENSHI SANGYO KK 发明人 RIYUU SHIYOUKAKU
分类号 G11C11/419;G11C7/06;G11C11/407;G11C11/409;(IPC1-7):G11C11/419 主分类号 G11C11/419
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