| 摘要 |
PURPOSE: To increase the density of a quantum box structure by a method wherein the second semiconductor is grown meeting the growing requirements for the specific substrate temperature and the irradiation amount for higher surface coverage of the first semiconductor of group V element and the lower surface coverage of the second semiconductor of the group V element. CONSTITUTION: The growing requirements for higher surface coverage of As on a two-dimensional thin film layer 13 is set up. The probability of capture of In on a two-dimensional thin film 12 is increased so as to form a three- dimensional structure in higher density. Furthermore, the requirements are set up so that the surface coverage of As in the three-dimensional structure thus formed may be higher immediately after the formation but getting lower in proportion to the growing process. Accordingly, the probability of capture of In gets lower in proportion to the growing process so as to suppress the growing rate. Resultantly, in proportion to the growing of the three-dimensional structure, the growing rate is self-suppressed so that the three-dimensional structure in even size i.e., the quantum box structure 13 may be formed.
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