| 摘要 |
PURPOSE: To form Ohmic contact between an Ni film and an n-type SiC area and prevent resistance increase and silicon oxide film corrosion by applying nickel film excluding at least one edge of the oxide film. CONSTITUTION: An n-type area 2 formed by nitrogen ion implantation and a silicon oxide film 3 are formed on the surface layer of an SiC substrate 1. The Ni film 4 is formed so as to be retreated from the edge of the silicon oxide film 3. Contact and Schottky junction are not formed between the SiC substrate 1 and silicon oxide film 3 and Ni film 4. A second metal film 10 is deposited after treating the Ni film 4 at a high temperature depending on necessity. As for the second metal film 10, metal films which allow Ohmic contact with p-type area, such as a nickel film, an aluminum film and an aluminum and titanium alloy film, are used. Thus, contact failure due to Schottky contact is prevented. |
