| 摘要 |
PURPOSE: To form a reflection preventing film as a laminated layer of a first thin film oxide layer including particular grain size of crystal formed by a first oxide and a second thin film oxide layer including particular grain size of crystal formed by a second oxide and make smooth the surface of particular. grain size of crystal. CONSTITUTION: As a first layer of a reflection preventing film 108, a first thin film oxide layer 109 (a layer consisting of indium oxide and tin oxide) is deposited in such a thickness before the grain size of the crystal particle grows to 20nm or more. On the surface of the first layer of the reflection preventing film 109, as a second layer, a second thin film oxide layer 110 (a layer consisting of zinc oxide of which growth of the crystal particle is different from that of the first layer) is deposited in such a thickness before the grain size of the crystal particle grows to 20nm or more. Therefore, the surface of the reflection preventing film 108 can be formed as the smooth surface consisting of fine crystal particles of 20nm or less. The first oxide layer 109 includes at least an element of Cd, In, Sn, while the second oxide layer 110 at least an element of Zn, Ti. |
