| 摘要 |
PURPOSE: To attenuate stresses induced between a chip and a substrate due to a large difference in thermal expansion coefficients by using a specific mixed metal layer which is made of specific metals and formed on a given substrate, and the chip made of a material having higher thermal expansion coefficient than that of the substrate. CONSTITUTION: An electronic apparatus includes at least one integrated circuit chip which is fixedly mounted on an electrically insulated substrate. The substrate is made of a dielectric material the surface of which can be metallized. The electronic apparatus includes a mixed metal layer comprises at least one ductile, thermally conductive metal which has ductility with a thermal expansion coefficient of at least approximately 7 ppm/ deg.C and at least one other metal having a thermal expansion coefficient up to approximately 5 ppm/ deg.C. In this manner, the electronic apparatus includes the mixed metal layer, which is mounted on the substrate and has a thickness of at least approximately 5 microns. At least one integrated circuit chip which is made of a material having higher thermal expansion coefficient than that of the substrate and mounted on the mixed metal layer. As a result of such a construction, stresses induced between the chip and the substrate by the difference in the thermal expansion coefficient can be attenuated. |
