| 发明名称 |
MANUFACTURE DEVICE AND METHOD OF SEMICONDUCTOR DEVICE |
| 摘要 |
PURPOSE: To form a silicon thin film having crystallizability at the lowest possible temperature. CONSTITUTION: An amorphous thin film 12 is formed on a glass substrate 11 by CVD process so as to form a mask 21 of a silicon nitride film. Next, nickel is selectively led into the amorphous silicon film 12 by spin coating a solution containing nickel as shown by 14. Finally, the amorphous silicon film 12 is crystallized by heat-treatment.
|
| 申请公布号 |
JPH0864545(A) |
申请公布日期 |
1996.03.08 |
| 申请号 |
JP19940225598 |
申请日期 |
1994.08.26 |
| 申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
YAMAZAKI SHUNPEI;CHIYOU KOUYUU |
| 分类号 |
H01L21/205;H01L21/02;H01L21/20;H01L21/336;H01L27/12;H01L29/786;(IPC1-7):H01L21/205 |
主分类号 |
H01L21/205 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
