WIRE OF HIGH ASPECT AND LOW RESISTIVITY DUE TO SURFACE DIFFUSION / VIA STRUCTURE AND ITS MANUFACTURE

摘要

PROBLEM TO BE SOLVED: To fill the line of a high aspect ratio without voids at a temperature far lower than that of a conventional method by using a low-temperature germanium air flow for affecting a metal and an alloy stuck to a high aspect ratio structure provided with the line and via. SOLUTION: A dielectric 10 is overcoated, and an opening 11 is formed on a substrate first. Thereafter, an appropriate material 12 of Al-Cu or the like is stuck after Ti by PVD. A metal and an alloy include a first element from the group of gold and silver and the second element of Ge. It is preferable that the metal alloy be provided with a first region of Ge in the range of atomic percentage of 0-40 and the second region of Ge in the range of atomic percentage of 60-100. Thereafter, a sintered hard alloy layer 13 is stuck, GeH4 gas is made to flow, and the via is filled. Preferably metallization 14 is Alx Cuy . After making this structure and GeH4 react, a side seam is filled by a low fusing point eutectic alloy 15.