摘要 |
<p>PURPOSE: To enable formation of pixel electrodes, electrodes and terminal part wirings of gate wirings and source wirings in the same stage and to decrease man-hours by forming these electrodes and wirings respectively of the same ITO. CONSTITUTION: The plural gate wirings 1 and source wirings 2 are arranged to intersect with each other on a transparent insulating substrate. The pixel electrodes 3 consisting of the ITO are formed in the regions enclosed by both wirings. Thin-film transistors 4 are formed across these pixel electrodes 3 and the intersected parts of the gate wirings 1 and the source wirings 2. Electrodes 5 consisting of the ITO are formed across the pixel electrodes 3 and the gate wirings 1. The terminal part wirings 8 connected to the respective ends of the gate wirings 1 and the source wirings 2 are formed by using the ITO. The simultaneous formation of the pixel electrodes 3, the every other terminal part wirings 8, the electrodes 5 and the remaining terminal part wirings 8, respectively, is made possible by forming all of the pixel electrodes 3, the electrodes 5 and the terminal part wirings 8 by using the ITO as the material.</p> |