| 摘要 |
PURPOSE: To obtain a high rate semiconductor device in which the reliability is enhanced by protecting the I/O lines against open circuit and short circuit. CONSTITUTION: The semiconductor device comprises an electrode part 13 formed on the to face of a semiconductor substrate 12 while being connected with a wire 14, and a metal side plate 17 formed on the outer circumferential side face of the semiconductor device 12. A clearance 19 is made in the metal side plate 17 at least at the part facing the wire 14 in order to prevent the wire 14 from touching the metal side plate 17. |
