| 摘要 |
PURPOSE: To inhibit the generation of a leakage current or an increase in a contact resistance which is generated in a contact part, which is formed using a titanium nitride film as a barrier metal film, at the time of a high-temperature annealing and to provide a high-reliability semiconductor device and a method of manufacturing the device. CONSTITUTION: A titanium film 4 is formed on the wall surface of a contact hole 9 provided in a silicon substrate 1, the film 4 is denatured into a titanium silicide film 5 and a titanium nitride film 6 by a high-temperature lamp annealing and moreover, a titanium nitride film 7 is made to laminate on the film 6 on a forming requirement that crystals are oriented using the face [200] as a main body and the crystalline orientation of the film 6 laminated with the film 7 is set using the face [200] as its main body. |
