| 摘要 |
PURPOSE: To prevent the adverse effect caused by the surge voltage generated by the wiring inductance in a semiconductor device, and to obtain a semiconductor device with which the dielectric breakdown and the like of a semiconductor element can be prevented. CONSTITUTION: An insulating plate 2, having the first, the second and the third metal plates, is fixed on the fourth metal plate 1. A diode 7 and an IGBT 6 are antiparallel-connected and fixed to the first metal plate 3, and the emitter electrode 18 on the IGBT 6 is connected to the second metal plate 5 by a conducting wire 14. The anode electrode 19 on the diode 7 is connected to the second metal plate 5 by a conducting wire 15. A collector main terminal 8 and a collector auxiliary terminal 12 are connected and fixed to the first metal plate 3 in such a manner that they are rising from the metal plate, and an emitter main terminal 9, an emitter control terminal 10 and an emitter auxiliary terminal 13 are connected and fixed to the second metal plate 5 in such a manner that they are rising from the metal plate vertically. Besides, the gate electrode 17 on the IGBT 6 is connected to the third, metal plate 4 by a conductive wire 16, and a gate control terminal 11 is connected and fixed to the fourth metal plate 4. |
