| 摘要 |
PURPOSE: To prevent corrosion of wiring during polishing process or after it, and prevent quality deterioration of wiring due to corrosion, by using abrasive grain solution in which chemical component for forming a corrosion resistant film on the surface of a metal film is mixed, when a metal film on a protruding part of an insulating film is eliminated by polishing. CONSTITUTION: An SiO2 film 12 whose thickness H is about 2μm, as an insulating film, is formed on an Si substrate 11. Photolithography and dry etching are performed, and a recessed part whose width W and depth D are about 1μm is formed in a specified portion on the SiO2 film 12. A metal film 13 containing copper is formed on the SiO2 film 12 by an ECR sputtering method (a). A polishing equipment which is generally used for polishing an Si wafer, and abrasive grain solution in which a specified amount of benzotriazole known as corrosion inhibitor is mixed are used, and polishing is performed for a specified time. Thereby a metal film 13a on the SiO2 film protruding part 12a is eliminated, and a buried metal wiring 13b whose width and depth are 1μm is formed.
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