| 摘要 |
PURPOSE: To provide a thin film transistor which can reduce an off-current without increase of the area of transistor. CONSTITUTION: In a thin film transistor comprising a thin film semiconductor region 10 formed on a substrate 1 and a plurality of electrodes for applying voltages to this thin film semiconductor region, the thin film semiconductor region has at least two high concentration impurity regions 4, a plurality of channel regions 3 between high concentration impurity regions and a low concentration impurity region 5 between the high concentration impurity region and channel region are provided and moreover a gate electrode 7 is also provided at the position corresponding to each channel region via the insulating layer 6.
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