| 摘要 |
PURPOSE: To enable a DRAM capacitor to be micronized and improved in dielectric strength and leakage current properties. CONSTITUTION: A lithium titanate film 13 (Li2 TiO3 : permittivity 50 or so) is formed on a polycrystalline silicon film 10 which serves as a lower electrode through the intermediary of a natural oxide film 11. Thereafter, a silicon oxide film 14 is formed on all the surface of the lithium titanate film 13 through a CVD method, furthermore a polycrystalline silicon film 15 is formed, and then a patterning process is carried out. As the lithium titanate film 13 has a high dielectric constant, an electrical field applied to a capacitor insulating film can be weekened by enhancing the capacitor insulating film in thickness, and a silicon oxide film 14 formed through a plasma CVD method is very small in leakage current in a region of low electrical field. |
