| 摘要 |
PURPOSE: To attain high speed signal delivery and to attain a high processing speed for an integrated circuit by controlling a voltage to drive a wire in the signal driving circuit used for a semiconductor integrated circuit. CONSTITUTION: A transistor(TR) T01 of the driving circuit 2 is turned on when inputs 1, 2 are at a low level and a TR T02 is turned off to set a potential of a signal line 1 to be a high potential VCC of a power supply so as to turn on a low potential load TR T04, then the amplitude is suppressed by a high potential depending on an on-resistance ratio of the T01, T04. In this case, a VREF 2 of a comparator circuit 4 is set to a slightly lower voltage by this potential. When the level of the inputs 1, 2 is transited to a high level from this state the T01 is turned off and the T02 is turned on to reduce the potential of the signal line 1. The potential of the signal line 1 is reduced cup to the VREF 1 of the comparator circuit 3 to set an output of the circuit 3 to be lower and then the high potential side load TR T03 is turned on. Thus, the amplitude is suppressed by the potential depending on the on-resistance of the T02, T03 with the high potential VCC in this way. |
