THIN FILM TRANSISTOR, SEMICONDUCTOR DEVICE AND LIQUID CRYSTAL DISPLAY USING SAME

摘要

PURPOSE: To prevent a leakage path without increasing the size of a CONSTITUTION: In a TFT wherein concentrated p region source region 5 and drain region are formed in a semiconductor region 2 on an insulating substrate 1 and a gate electrode 4 is formed on a channel through a gate insulating film 3, a high concentration n region 8 is formed in a region where a side wall of the semiconductor region 2 and the gate electrode 4 intersect to prevent leakage in the region.