| 摘要 |
<p>PURPOSE: To accurately narrow the interval between an emitter and a gate by doping impurities in the surface of a semiconductor substrate, forming a stripe-form insulating film in a conductor layer and after that. applying predetermined treatment including thermal oxidation treatment thereto. CONSTITUTION: At first, a conductor layer 12 into which impurities are doped in advance is formed in the upper surface of a conductive type semiconductor substrate 10, and successively a stripe-form insulating film 14 is formed on the layer 12. After that, thermal oxidation treatment is performed by using the film 14 as a ask, thereby forming thermal oxidation films 16a, 16b in the upper surface of the substrate and at the same time leaving a part of the layer 12 on the lower side of the film 14. After that, the whole surface of the film 16a of one sidewall side of the film 14 is covered, and also a comb tooth-like metal thin film is formed so as to expose the upper surface of the film 14 and a part of the film 16 of the other sidewall side. Successively, the film 14 and a part of exposed thermal oxidation film is removed to obtain an emitter 25 comprising a metal thin film and a gate 12a comprising the remaining part of the conductor layer 12. At that time, the interval between the emitter and the gate becomes equal to a distance from the comb tooth-like end surface to the sidewall of the gate.</p> |
