| 摘要 |
PURPOSE: To provide a semiconductor device having a good characteristic by joining a metal electrode and a semiconductor having a wide band gap, with a joining part of low resistance having a uniform contact distribution. CONSTITUTION: A ZnSe-series group II-VI semiconductor laser having a Cd(0.3) Zn(0.7)Se strain active layer 14 is formed on a GaAs substrate 10, and a p-type InN electrode buffer layer 18 is provided between a p-type ZnSe electrode buffer layer 17 and an AuZn metal electrode 20. As a result of this, it becomes possible to insert crystals, as a buffer layer, containing nitrogen capable of forming, between a metal electrode and a semiconductor having a wide band gap equal to or higher than 2.3eV at which direct connection of metal can not form ohmic electrode between the both, a junction of low resistance having a uniform contact distribution to both materials, to form an excellent junction. Accordingly, it becomes possible to provide a semiconductor device having excellent characteristics. |
