发明名称 PHASE EDGE TRIMLESS LITHOGRAPHY METHOD OF HIGH RESOLUTION
摘要 <p>PROBLEM TO BE SOLVED: To minimize effects on a desired image, to eliminate all residual images generated by a mask and to improve resolution with a simple and inexpensive process by excessively exposing resist by using the mask, so as to compensate the positive bias of the mask. SOLUTION: A phase edge PSM is provided with chrome images on a mask biased for two constituting gratings (30). The resist is overexposed by using the mask, and a positive bias of the mask is compensated (31). Over exposure minimizes the effects on the desired image and eliminates all the residual images generated by the phase edge and the mask. Finally, the resist is processed by a normal method (32) and the exposure pattern of improved resolution and of process allowable degree is formed.</p>
申请公布号 JPH0864523(A) 申请公布日期 1996.03.08
申请号 JP19950177416 申请日期 1995.07.13
申请人 INTERNATL BUSINESS MACH CORP <IBM> 发明人 RICHIYAADO ARAN FUAAGASON;RAASU URUFUGIYANGU RIIBUMAN;RONARUDO MAIKERU MARUTEIINO;TOOMASU HARORUDO NIYUUMAN
分类号 G03F1/34;G03F7/20;H01L21/027;(IPC1-7):H01L21/027;G03F1/08 主分类号 G03F1/34
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