发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURE OF INTERCONNECTION STRUCTURE
摘要 <p>PROBLEM TO BE SOLVED: To provide a semiconductor device provided with diamond-like carbon as one of a structure as an insulator for separating a conductor of more than one level on an integrated circuit chip. SOLUTION: This semiconductor device is provided with a substrate 12, provided with the first layer 16 of exposed metal on an upper surface 14, an insulator layer 20 of a diamond-like carbon material formed on the upper surface 14 of the substrate 12 and a second layer 22 of a metal patterned, so as to form the plural conductors on the insulation body layer 20.</p>
申请公布号 JPH0864591(A) 申请公布日期 1996.03.08
申请号 JP19950173771 申请日期 1995.07.10
申请人 INTERNATL BUSINESS MACH CORP <IBM> 发明人 SUTEFUAN ARAN KOOHEN;DANIERU CHIYAARUZU EDERUSUTEIN;ARUFURETSUDO GURIRU;JIYURIJIYU ROSUTEISURABU PARASHIYUZATSUKU;BUISHIYUNUBAI BUITSUTARUBAI PATERU
分类号 H01L21/8238;H01L21/314;H01L21/768;H01L23/522;H01L23/532;H01L27/092;(IPC1-7):H01L21/314;H01L21/823 主分类号 H01L21/8238
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