| 摘要 |
<p>PURPOSE: To provide a semiconductor device, for which the structural strength of a low dielectric constant material is improved. CONSTITUTION: A metal layer 14 is provided with a first part and a second part, and the metal layer is deposited on the substrate 12 of a semiconductor wafer 10. The widely-spaced leads 16 are formed at the first part of the metal layer 14 and a first structural dielectric layer 26 is deposited at least on the widely-spaced leads. The closely-spaced leads 18 are formed at the second part of the metal layer 14 and a low dielectric constant material 34 is deposited between the leads 18. A second structure dielectric layer 36 is deposited at least on the low dielectric constant material 34 and the leads 18. The advantage of the present invention is that the structural strength is improved by arranging the structurally weak low dielectric constant material only at a required part, that is an area provided with the closely-spaced leads.</p> |
