发明名称 Crystal growth from molten zone
摘要 In a crystal growth process in which starting material is fed to a heated molten zone and, after melting, is deposited in crystalline form on a substrate, the novelty is that the molten zone is stabilised mechanically by (a) a boundary wall which is fixed w.r.t. the zone; (b) a base which is movable w.r.t. the wall; and (c) a meniscus located between the base and the wall. Also claimed is a crystal growth appts. (2) including the wall (89), the base and the meniscus (94) described above.
申请公布号 DE4430894(A1) 申请公布日期 1996.03.07
申请号 DE19944430894 申请日期 1994.08.31
申请人 DEUTSCHE FORSCHUNGSANSTALT FUER LUFT- UND RAUMFAHRT E.V., 53111 BONN, DE 发明人 BECKER, UWE, DR.RER.NAT., 70499 STUTTGART, DE
分类号 C30B15/00;C30B15/24 主分类号 C30B15/00
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