发明名称 |
Crystal growth from molten zone |
摘要 |
In a crystal growth process in which starting material is fed to a heated molten zone and, after melting, is deposited in crystalline form on a substrate, the novelty is that the molten zone is stabilised mechanically by (a) a boundary wall which is fixed w.r.t. the zone; (b) a base which is movable w.r.t. the wall; and (c) a meniscus located between the base and the wall. Also claimed is a crystal growth appts. (2) including the wall (89), the base and the meniscus (94) described above. |
申请公布号 |
DE4430894(A1) |
申请公布日期 |
1996.03.07 |
申请号 |
DE19944430894 |
申请日期 |
1994.08.31 |
申请人 |
DEUTSCHE FORSCHUNGSANSTALT FUER LUFT- UND RAUMFAHRT E.V., 53111 BONN, DE |
发明人 |
BECKER, UWE, DR.RER.NAT., 70499 STUTTGART, DE |
分类号 |
C30B15/00;C30B15/24 |
主分类号 |
C30B15/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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