发明名称 MULTI-INPUT NAND CIRCUIT
摘要 a) connecting the output(Z0-Z12) of the NAND type decoder(1) to the PMOS(PM1-PM12) gate connected between the source power port(VDD) and output port(Z) in parallel; b) connecting the source power port and output port to source and drain of the PMOS in common; and c) connecting the output(Z13-Z15) of the NAND type decoder to the NMOS(NM1-NM2) gate connected in parallel between the output port and ground port through inverters(I0-I2).
申请公布号 KR960003220(B1) 申请公布日期 1996.03.07
申请号 KR19930019687 申请日期 1993.09.24
申请人 LG SEMICONDUCTOR CO., LTD. 发明人 LEE, DONG - HOON
分类号 H03K19/00;H03K19/21;(IPC1-7):H03K19/00 主分类号 H03K19/00
代理机构 代理人
主权项
地址