发明名称 |
MULTI-INPUT NAND CIRCUIT |
摘要 |
a) connecting the output(Z0-Z12) of the NAND type decoder(1) to the PMOS(PM1-PM12) gate connected between the source power port(VDD) and output port(Z) in parallel; b) connecting the source power port and output port to source and drain of the PMOS in common; and c) connecting the output(Z13-Z15) of the NAND type decoder to the NMOS(NM1-NM2) gate connected in parallel between the output port and ground port through inverters(I0-I2).
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申请公布号 |
KR960003220(B1) |
申请公布日期 |
1996.03.07 |
申请号 |
KR19930019687 |
申请日期 |
1993.09.24 |
申请人 |
LG SEMICONDUCTOR CO., LTD. |
发明人 |
LEE, DONG - HOON |
分类号 |
H03K19/00;H03K19/21;(IPC1-7):H03K19/00 |
主分类号 |
H03K19/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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