| 摘要 |
<p>Method for the production of trisilane from monosilane, by which gaseous monosilane is passed into a reactive area where it is subjected to an electric discharge produced by a high frequency current. The method is characterized in that a) the monosilane is used in the form of a mixture with at least one inert gas chosen from the group consisting of helium and argon; b) the pressure of the gaseous mixture in the reactive area is from 0.1 to 3 105 Pa, and c) the gaseous mixture is placed in contact, within the reactive area under the electric discharge, with a wall cooled to a temperature which must be over -120 °C and at most -90 °C, preferably in the range of 115 °C - 100 °C. The invention is for use, in particular, in the electronic industry.</p> |
