| 摘要 |
PURPOSE: To improve the ohmic contact of a p-type gallium nitride compound semiconductor with its electrode and to reduce the Vf of a light emitting element and a light receiving element using it by using Mg or its alloy to the side in contact with its p-type layer as the electrode of a p-type gallium nitride compound semiconductor device. CONSTITUTION: A mask of a predetermined shape is formed on the surface of the p-type GaN layer 7 of a wafer, the layer 7 is etched by dry etching, and the part of an n-type GaN layer 3 to be formed with an electrode is exposed, Then, Ti is evaporated as an n-type electrode 8 and Al in a predetermined shape on the Ti is deposited on the surface of the layer 3. Further, Mg is evaporated, Ni is deposited on the Mg, and further Au is evaporated on the Mg on the substantially entire surface of the layer 7 as a p-type electrode 99. After the evaporations, the wafer is annealed in an inert gas atmosphere, both the electrodes are alloyed, the electrode 99 is made light-transmissive, annealed, and the wafer is then cut in a predetermined shape as a light emitting chip. |
