| 摘要 |
PURPOSE: To provide a semiconductor light emitting element which uses gallium nitride based compound semiconductor wherein side surfaces etched perpendicularly to a substrate surface can improve light emitting performance of a semiconductor laser and an LED which emits light from the side surface, and a manufacturing method of the element. CONSTITUTION: In a semiconductor light emitting element wherein gallium nitride based compound semiconductor layers 2-7 which contain at least an N-type layer and a P-type layer and have a light emitting part (an active layer) are laminated on a sapphire substrate 1 wherein an R surface or an M surface is the main surface, etching is performed perpendicularly to the substrate 1, and light is led out from the etched side surface, the side surface from which the light is led out is the (0001) crystal plane of gallium nitride based compound semiconductor. |
