| 摘要 |
PURPOSE: To provide a semiconductor light emitting element that can widely change the light emitting wavelength despite the crystal mixing ratio of In. CONSTITUTION: A semiconductor light emitting element comprises a gallium nitride compound semiconductor layer having at least an n-type layer 4 and a p-type layer 6 and a light emitting layer 5 laminated on a substrate. At least part of nitrogen of the semiconductor of the light emitting layer is substituted for phosphorus and/or arsenic. |
