METHOD FOR THE PREPARATION OF TRISILANE FROM MONOSILANE

摘要

Method for the production of trisilane from monosilane, by which gaseous monosilane is passed into a reactive area where it is subjected to an electric discharge produced by a high frequency current. The method is characterized in that a) the monosilane is used in the form of a mixture with at least one inert gas chosen from the group consisting of helium and argon; b) the pressure of the gaseous mixture in the reactive area is from 0.1 to 3 10<5> Pa, and c) the gaseous mixture is placed in contact, within the reactive area under the electric discharge, with a wall cooled to a temperature which must be over -120 DEG C and at most -90 DEG C, preferably in the range of 115 DEG C - 100 DEG C. The invention is for use, in particular, in the electronic industry.