发明名称 Photoresist composition and etching method
摘要 <p>A positive type or negative type photoresist composition for fine processing having excellent resolution, sensitivity, adhesive-ness and developability comprising: (a) an alkali soluble resin or a resin having anti-alkali dissolution groups in the molecules thereof, (b) a light-sensitive compound, and (c) at least one organic compound selected from the group consisting of organic phosphorus acid compounds and esters thereof in an amount of 0.001 to 10% by weight based on a weight of the resin. In addtion, the present invention is directed to an etching method utilizing the positive type or negative type photoresist composition. o</p>
申请公布号 EP0540032(B1) 申请公布日期 1996.03.06
申请号 EP19920118627 申请日期 1992.10.30
申请人 FUJI PHOTO FILM CO., LTD. 发明人 YOSHIMOTO, HIROSHI;KOBAYASHI, KESANAO
分类号 G03F7/004;C07C69/00;C07C309/73;G03F7/008;G03F7/038;G03F7/039;G03F7/085;H01L21/027;(IPC1-7):G03F7/085 主分类号 G03F7/004
代理机构 代理人
主权项
地址